Hall Effect in Normal and Superconducting thin Metal Films

David A. Shapiro

Advisor: Dr. Joseph C. Amato, Colgate University

Abstract

The Hall Effect was measured vs magnetic field in a normal state 200 Angstrom Ta film at cryogenic temperatures. This measurement led to a calculation of the carrier concentration for the samples studied. In a superconducting 300 Angstrom Al film the Hall and longitudinal resistivities were measured as a function of both applied magnetic field and temperature. The Hall resistivity data is unexplainable with the model of flux flow presented. The longitudinal resistivities, however, when considered within the "flux creep" model provide and easy calculation of the activation energies for the sample studied.